机译:Ge-掺杂AlGaN中DX状态的性质
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA;
Adroit Materials Cary North Carolina 27518 USA;
Adroit Materials Cary North Carolina 27518 USA;
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA;
Adroit Materials Cary North Carolina 27518 USA;
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA;
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA;
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA Adroit Materials Cary North Carolina 27518 USA;
机译:大掺杂AlGaN的电气和光学性质
机译:二氧化硅和掺有GE的二氧化硅中3.1电动汽车排放的双重性质
机译:二氧化硅和掺有GE的二氧化硅中3.1电动汽车排放的双重性质
机译:AlGaN中氧DX中心的证据
机译:基于AlGaN的深紫色激光器中的光学增益和模态损耗=基于Algan的UVC激光二极管中的光学利润和模态损耗
机译:劈裂体的动态性质及其与DDX1体Cajal体和宝石的空间关系
机译:alGaN中氧气DX中心的证据
机译:alGaN和alGaN / GaN外延层中的供体,受体和陷阱