机译:超过1.2μm的MBE生长策略和GaAsBi量子阱发光结构的优化
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China|Univ Western Australia, Sch Elect Elect & Comp Engn, 35 Stirling Highway, Crawley, WA 6009, Australia;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Univ Western Australia, Sch Elect Elect & Comp Engn, 35 Stirling Highway, Crawley, WA 6009, Australia;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China|Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden;
机译:MBE-Grown Si:Er发光结构:外延生长条件对杂质浓度和光致发光的影响
机译:Ga(In)NP / GaP结构的气源MBE生长及其在红色发光二极管中的应用
机译:GS-MBE在基于InP的异质结构上外延生长1.55μm的InAs量子虚线,用于长波长激光应用
机译:GA(IN)NP / GAP结构的气流源MBE生长及其对红色发光二极管的应用
机译:快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
机译:InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
机译:MBE在单个和堆叠层中发射13μm的INAS / GaAs量子点的生长优化和光谱
机译:极化电子发射体梯度结构的mBE增长