机译:了解氢和氮掺杂对非晶In-Ga-Zn-O薄膜晶体管中的有源缺陷的影响
Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China;
Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China;
Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China;
Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium;
Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China;
Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China;
Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China;
Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micronanooptoelect Devices, Changsha 410082, Hunan, Peoples R China;
机译:非晶ln-Ga-Zn-O薄膜晶体管中电子陷阱的氢钝化
机译:氮掺杂氢化非晶锗薄膜的缺陷发光
机译:氮掺杂有源层的非晶氧化物薄膜晶体管
机译:氮掺杂对N型氢化非晶硅薄膜结构和光学性质的影响
机译:掺杂和未掺杂的氢化非晶硅薄膜中纳米晶硅夹杂物的影响。
机译:有源层厚度不同的非晶InGaZnO薄膜晶体管中漏极电流应力引起的不稳定性
机译:具有氮掺杂异质结构沟道层的非晶氧化物薄膜晶体管
机译:氢化富氮非晶氮化硅薄膜中光诱导缺陷的微观起源。