InAs QDs on (111 )-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

摘要

Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on a U-shaped patterned Si (001) substrate, With in-situ growth on such substrates by the dual chamber molecular beam epitaxy, a high-quality GaAs film is obtained. The (111)-faceted sawtooth structures are found effectively annihilating the antiphase boundaries and terminating mostly the lattice mismatch induced dislocations at the interface, while the hollow structures can effectively reduce the thermal stress. The high-quality GaAs layers on (111)-faceted hollow Si (001) arc measured with a threading dislocation density of similar to 10(6)cm(-2) via the electron channeling contrast image method. By implementing the designed structure, strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at both O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are achieved on Si (001) substrates. The O-band emission of InAs/GaAs QDs on Si (001) shows similar intensity to that on the GaAs substrate. Published by AIP Publishing.