Effects of modulation p doping in InAs quantum dot lasers on silicon

摘要

We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 mu m quantum dot lasers epitaxially grown on silicon. Gain spectra and transparency points are measured for structurally identical lasers with varying levels of p doping in the active region. A many-body model is employed to facilitate understanding of the material gain characteristics. It has been found that appropriate p doping greatly reduces transparency and improves differential gain. It is also found that the improvements saturate with excessive doping because of the increase in nonradiative carrier recombination. Published by AIP Publishing.