Strain-compensated InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

摘要

The threshold current density and the characteristic temperature of strain-compensated InGaAs/InGaAsP/GaAs QW lasers are investigated theoretically. These results are also compared with those of uncompensated InGaAs/InGaAsP/GaAs QW lasers. From this calculation, it was confirmed that strain-compensated lasers have lower threshold current density and better performance at high temperature compared to uncompensated lasers. This is attributed to enhanced carrier confinement and weaker temperature dependence of N_(th) for strain-compensated lasers. The well number dependence of the characteristic temperature is dominant for lasers with relatively short cavity length.