Growth and morphology of 0.80 eV photoemitting indium nitride nanowires

摘要

InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100 nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. (C) 2004 American Institute of Physics.