Indium Nitride Nanowire Growth by Chemical Vapor Deposition and Electrical Characterization

摘要

The Ill-nitrides have attracted great interest due to their wide range of applications from high efficiency solid-state lighting and photovoltaics to high-power and high temperature electronics. This paper presents a detailed study of InN nanowire morphology changes originating from the process parameters by chemical vapor deposition using In and NH_3 as source materials on SiO_2/Si substrates. Nickel catalysts with various forms have been used. The growth experiments have been carried out at temperatures between 800 and 1100°C under H_2 as carrier gas. Significant changes in nanowire size and morphology have been observed in accordance with the variations in process parameters. The sources of these variations and the growth mechanisms are discussed. In fact, the InN nanowire diameters range from 10 nm to 250 nm; and lengths up to 50 μm depending on the catalyst initial form. The grown nanowires and devices have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and semiconductor parameter analyzer.