Reduction of the electrostatic coupling in a large-area internal inductively coupled plasma source using a multicusp magnetic field

摘要

A large area (1020 mmx830 mm) inductively coupled plasma (ICP) source has been developed using an internal-type linear antenna with permanent magnets forming a multicusp magnetic field. The large rf antenna voltages, which cause the electrostatic coupling between the antenna and the plasma in a large area internal-type linear-antenna ICP source, were decreased significantly by applying the magnetic field near and parallel to the antenna. Through the application of the magnetic field, an approximately 20% higher plasma density, with a value of close to 1.0x10(11) cm(-3) at a rf power of 2000 W, and about three times higher photoresist etch rates were observed, while maintaining the plasma nonuniformity at less than 9%. (C) 2004 American Institute of Physics.