Interlayer composition of HfO_(2)/Si(001) films

摘要

We report medium energy ion scattering results that determine the extent of Hf incorporation in the interfacial region of HfO_(2)/Si(001) films. The lack of change in the Hf backscatter peak after interlayer growth by in situ oxidation indicates extremely low levels of Hf incorporation. We conclude that silicate formation is not a significant factor in determining capacitances of HfO_(2)/Si(001) structures, provided that the deposition technique does not involve creation of a silicide as an intermediate step.