首页> 外国专利> Positive-type radiation-sensitive composition, cured film, an interlayer insulating film, method of forming an interlayer insulating film, display device, and the siloxane polymer for the interlayer insulating film

Positive-type radiation-sensitive composition, cured film, an interlayer insulating film, method of forming an interlayer insulating film, display device, and the siloxane polymer for the interlayer insulating film

机译:正型放射线敏感性组合物,固化膜,层间绝缘膜,层间绝缘膜的形成方法,显示装置以及用于层间绝缘膜的硅氧烷聚合物

摘要

PROBLEM TO BE SOLVED: To provide a polysiloxane positive-type radiation-sensitive composition which has high compatibility with a quinonediazide compound and with which an interlayer insulating film excellent in resistance to resist peeling liquid in an ITO film etching process can be formed.;SOLUTION: The positive-type radiation-sensitive composition contains (A) a siloxane polymer and (B) a quinone diazide compound, in which the content of aryl groups relative to Si atoms in the siloxane polymer (A) is greater than 60% by mole and no greater than 95% by mole. The siloxane polymer (A) may be a hydrolyzed condensate of a hydrolyzable silane compound including at least a compound expressed by expression (1) (in expression (1), R1 expresses each independently a hydrogen atom, a 1-10C alkyl group, a 2-10C alkenyl group or a 6-15C aryl group. R2 expresses each independently a hydrogen atom, a 1-6C alkyl group, a 1-6C acyl group or 6-15C aryl group. All or some of hydrogen atoms of the alkyl group, the alkenyl group and the alkyl group may be substituted. n is an integer of 0-3).;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种聚硅氧烷正型辐射敏感性组合物,其与醌二叠氮化物化合物具有高相容性,并且可以形成在ITO膜蚀刻工艺中具有优异的抗剥离液耐受性的层间绝缘膜。 :正型放射线敏感性组合物包含(A)硅氧烷聚合物和(B)醌二叠氮化合物,其中硅氧烷聚合物(A)中相对于Si原子的芳基含量大于60摩尔%。并且不大于95摩尔%。硅氧烷聚合物(A)可以是至少包含由式(1)表示的化合物的可水解硅烷化合物的水解缩合物(在式(1)中,R 1 分别独立地表示氢原子, 1-10C烷基,2-10C烯基或6-15C芳基R 2 分别表示氢原子,1-6C烷基,1-6C酰基烷基,烯基和烷基的氢原子全部或部分被取代,n为0-3的整数);版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP5533232B2

    专利类型

  • 公开/公告日2014-06-25

    原文格式PDF

  • 申请/专利权人 JSR株式会社;

    申请/专利号JP20100113006

  • 发明设计人 一戸 大吾;花村 政暁;高瀬 英明;

    申请日2010-05-17

  • 分类号G03F7/075;G03F7/023;G03F7/004;

  • 国家 JP

  • 入库时间 2022-08-21 16:14:42

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号