Electron field emission from SiC/Si heterostructures by high temperature carbon implantation into silicon

摘要

A high-intensity electron field emission was obtained from a SiC/Si heterostructure, which was formed by high temperature carbon implantation into silicon. Densely distributed sharp tips were easily obtained at the interface of the SiC/Si heterostructure by post-implantation etching off the top Si. A low turn-on field of 2.6 V/μm was observed with samples formed by 160 keV carbon implantation with a dose of 8.0×10~(17) cm~(-2). The existence of the densely distributed small protrusions was considered as the main reason for efficient emission.