Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths

摘要

The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences (1×10~(10)-1×10~(16) cm~(-2)) for ~(11)B~(+), ~(75)As~(+), ~(31)P~(+), and BF_(2)~(+) implanted in Si wafers at various energies. In addition, the use of excitation sources with a range of absorption coefficients is shown to be very useful in improving the sensitivity of the PCR amplitude to implant dose.