Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers

摘要

The annealing temperature dependences of the photocarrier radiometry (PCR) amplitude, the frequency dependences of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze the thermally annealed (C to C) silicon samples with arsenic ion (As implantation of cm dose. The dependence of the carrier effective lifetime on the annealing temperature has been extracted from the normalized quasi-time-domain PCR waveform profiles, and showed to be related to the transient PCR signals. Furthermore, the phenomenon of the reduction of the carrier effective lifetime caused by incomplete annealing (above C and 30 s) of As implanted silicon samples were observed and analyzed.