Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots

摘要

We report on the effect of vertical correlation on GaN/AlN quantum dots grown by plasma-assisted molecular-beam epitaxy using the modified Stranski-Krastanow growth mode. When increasing the number of GaN periods, we observe a homogenization of the island distribution and a redshift of the luminescence line. This redshift is attributed to an increase of the quantum Stark effect due to the increase of the piezoelectric contribution to the internal electric field.