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首页> 外文期刊>Applied Physics Letters >High-throughput growth temperature optimization of ferroelectric Sr_(x)Ba_(1-x)Nb_(2)O_(6) epitaxial thin films using a temperature gradient method
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High-throughput growth temperature optimization of ferroelectric Sr_(x)Ba_(1-x)Nb_(2)O_(6) epitaxial thin films using a temperature gradient method

机译:利用温度梯度法优化铁电Sr_(x)Ba_(1-x)Nb_(2)O_(6)外延薄膜的高通量生长温度

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We have developed a multisample film growth method on a temperature-gradient substrate holder to quickly optimize the film growth temperature in pulsed-laser deposition. A smooth temperature gradient is achieved, covering a range of temperatures from 200 to 830℃. In a single growth run, the optimal growth temperature for Sr_(x)Ba_(1-x)Nb_(2)O_(6) thin films on MgO(001) substrates was determined to be 750℃, based on results from ellipsometry and piezoresponse force microscopy. Variations in optical properties and ferroelectric domains structures were clearly observed as function of growth temperature, and these physical properties can be related to their different crystalline quality. Piezoresponse force microscopy indicated the formation of uniform ferroelectric film for deposition temperatures above 750℃. At 660℃, isolated micron-sized ferroelectric islands were observed, while samples deposited below 550℃ did not exhibit clear piezoelectric contrast.
机译:我们已经开发了一种在温度梯度基板支架上的多样品膜生长方法,以快速优化脉冲激光沉积中的膜生长温度。实现了平滑的温度梯度,涵盖了200至830℃的温度范围。在单次生长过程中,根据椭圆光度法和椭圆偏振法的结果,确定Sr_(x)Ba_(1-x)Nb_(2)O_(6)薄膜在MgO(001)衬底上的最佳生长温度为750℃。压电响应显微镜。清楚地观察到光学性质和铁电畴结构随生长温度的变化,这些物理性质可能与它们的不同晶体质量有关。压电响应显微镜显示,在750℃以上的沉积温度下形成了均匀的铁电薄膜。在660℃下,观察到了孤立的微米级铁电岛,而在550℃以下沉积的样品则没有清晰的压电对比。

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