首页> 外文期刊>Applied Physics Letters >Temperature stability of permittivity and dielectric relaxation in multilayered thin films of (Ba_(0.80)Sr_(0.20))(Ti_(1-x)Zr_(x))O_(3) with a compositionally graded layer
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Temperature stability of permittivity and dielectric relaxation in multilayered thin films of (Ba_(0.80)Sr_(0.20))(Ti_(1-x)Zr_(x))O_(3) with a compositionally graded layer

机译:(Ba_(0.80)Sr_(0.20))(Ti_(1-x)Zr_(x))O_(3)的多层薄膜的介电常数和介电弛豫的温度稳定性

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摘要

Mutilayered thin (Ba_(0.80)Sr_(0.20))(Ti_(1-x)Zr_(x))O_(3) (BSTZ) films with various compositional graded layers (CGL) have been successfully fabricated on Nb doped SrTiO_(3) substrates by pulsed-laser deposition technique with four BSTZ ceramic targets (x=0.36,0.18,0.08,0). The gradients of compositions are artificially tailored in multilayered thin films by varying the CGL, and x-ray diffraction indicates that the internal stress is modulated in the multilayered films. Influence of the composition gradient on the dielectric properties has been investigated at the temperature range from 120 to 440 K. Temperature stability of permittivity of the multilayered films is found to be improved with the increase of the gradients of compositions. Moreover, a dielectric relaxation process with activation energy of 1.02 eV is observed, which is also related to the composition gradient, and can be described to motion of oxygen vacancies. The results show that the temperature stability of permittivity can be tailed by the design of multilayered film with CGL, and the internal stress induced by the gradients of composition could influence the relaxation process.
机译:已成功在Nb掺杂SrTiO_(3)上成功制备了具有各种成分梯度层(CGL)的多层薄(Ba_(0.80)Sr_(0.20))(Ti_(1-x)Zr_(x))O_(3)(BSTZ)薄膜。 )基板,采用脉冲激光沉积技术,带有四个BSTZ陶瓷靶材(x = 0.36,0.18,0.08,0)。通过改变CGL在多层薄膜中人为地调整了组成的梯度,X射线衍射表明内部应力在多层薄膜中得到了调节。已经研究了在120至440K的温度范围内组成梯度对介电性能的影响。发现随着组成梯度的增加,多层膜的介电常数的温度稳定性得到改善。此外,观察到活化能为1.02 eV的介电弛豫过程,这也与成分梯度有关,可以描述为氧空位的运动。结果表明介电常数的温度稳定性可以通过CGL多层膜的设计来实现,而组成梯度引起的内应力可能影响弛豫过程。

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