Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

摘要

The effect of excess C incorporation on the deep level spectrum of n-type GaN grown by metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth conditions were used to intentionally incorporate excess C compared to atmospheric pressure (AP) growth conditions. GaN samples with high C content are found to be highly resistive, and samples codoped with C and Si are heavily compensated. From a comparison of deep level optical spectroscopy and deep level transient spectroscopy measurements of the LP-grown codoped GaN:C:Si sample with the AP-grown unintentionally doped GaN, two deep levels at E_(c)-E_(t)=1.35 and 3.28 eV are observed to have a direct relation to excess C incorporation. Comparing these activation energies to previous theoretical studies strongly suggests that the levels may be associated with a C interstitial and C_(N) defect, respectively. These results suggest that C forms not only a shallow acceptor level but also a deep acceptor level in GaN, and these levels contribute to the compensation of the free carriers in n-type GaN:C.