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首页> 外文期刊>Applied Physics Letters >Ambipolar organic thin-film transistors using C_(60)/pentacene structure: Characterization of electronic structure and device property
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Ambipolar organic thin-film transistors using C_(60)/pentacene structure: Characterization of electronic structure and device property

机译:使用C_(60)/并五苯结构的双极性有机薄膜晶体管:电子结构和器件性能的表征

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We fabricated ambipolar organic thin-film transistors (OTFTs) using C_(60) and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C_(60) on pentacene (C_(60)/pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C_(60)/pentacene relative to pentacene on C_(60), are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm~2/V s and 0.007 cm~2/V s for the p-channel and the n-channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C_(60) or pentacene.
机译:我们使用C_(60)和并五苯制造了双极性有机薄膜晶体管(OTFT)。通过使用紫外光电子能谱和X射线光电子能谱来研究界面的电子结构。确定了界面偶极子的大小和界面处的能带弯曲,并获得了并五苯上C_(60)的完整能级图(C_(60)/并五苯)。相对于C_(60)上的并五苯,由于C_(60)/并五苯中电荷的重新分布增强,降低的带偏移对双极性OTFT是有利的。对于p通道操作和n通道操作,所测量的场效应迁移率分别为0.017cm 2 / V s和0.007cm 2 2 / V s。与使用C_(60)或并五苯的单极OTFT的阈值电压相比,p沟道的阈值电压为-2 V,n沟道的阈值电压为15.6V。

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