Fabrication of ambipolar field-effect transistor device with heterostructure of C_(60) and pentacene

摘要

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C_(60) and pentacene. Three types of device structures in the C_(60)/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C_(60) and pentacene, the mobility μ in p-channel operation was estimated to be 6.8×10~(-2) cm~(2) V~(-1) s~(-1), while the μ in n-channel operation was 1.3×10~(-3) cm~(2) V~(-1) s~(-1). This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.