Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates

摘要

Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with varying sized self-assembled InAs/GaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second decay component is considerably longer than the first one, and has been measured to be as long as 300 ns. This slow component is attributed to carrier recapturing and indirect radiative recombination processes.