Ambipolar organic field-effect transistor using gate insulator hysteresis

摘要

An organic field-effect transistor based on a copper-phthalocyanine and cyanoethylpullulan gate insulator showed ambipolar operation using gate insulator hysteresis, which appeared at less than 1 mHz. The gate insulator possesses spontaneous polarization of 1.6 μC/cm~2 and a coercive electric field of 50 kV/cm. After poling in an effort to obtain a large amount of accumulated charge, the field-effect mobilities of the hole and electron were 4.1 X 10~(-3) and 3.5 X 10~(-6) cm~2/Vs, respectively. The on/off ratio at V_(SG) = +-10 V was 6 X 10~4 for the p type and 70 for the n type.