Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures

摘要

Photoluminescence and photoreflectance measurements have been performed to investigate molecular-beam-epitaxy-grown InAs/InGaAlAs/InP structures with different-size InAs quantum dashes. Optical features related to all relevant parts of the structure have been detected and recognized, including a line which has been attributed to the ground-state wetting layer quantum well transition. The spectral position of the latter is independent of the nominal InAs layer thickness in contrast to quantum-dash emission peak, which shifts sequentially to the red due to an increase of the islands' size. The interpretation has been supported by energy level calculations showing that the wetting layer has to be approximately 2 ML thick and that only one state is confined in such a thin well for each kind of carriers, i.e., electrons, heavy, and light holes.