Investigating the stability of zinc oxide thin film transistors

摘要

The stability of thin film transistors incorporating sputtered ZnO as the channel layer is investigated under gate bias stress. Positive stress results in a positive shift of the transfer characteristics, while negative stress results in a negative shift. Low bias stress has no effect on the subthreshold characteristics. This instability is believed to be a consequence of charge trapping atear the channel/insulator interface. Higher biases and longer stress times cause degradation of the subthreshold slope, which is thought to arise as a consequence of defect state creation within the ZnO channel material. After all stress measurements, the devices recover their original characteristics at room temperature without any annealing.