High-performance pentacene thin-film transistors with high dielectric constant gate insulators

摘要

Pentacene thin-film transistors (TFTs) with titanium silicon oxide (Ti_(1-x)Si_xO_2) gate insulator have been fabricated to realize high field-effect mobility at practical voltages. The Ti_(1-x)Si_xO_2 films deposited by rf sputtering exhibited a flat surface and high dielectric constant The pentacene TFT with the Ti_(1-x)Si_xO_2 gate insulator had high performance with a threshold voltage of -1.6 V, an inverse subthreshold slope of 0.13 V/decade, and a current on/off ratio of 10~7 at a voltage of -10 V. The field-effect mobilities of higher than 1 cm~2/V s were obtained in the whole voltage range of -2 to -15 V.