机译:高性能五烯有机薄膜晶体管基于室温处理的HF0.13LA0.87O作为栅极电介质
Univ Hong Kong Dept Elect & Elect Engn Hong Kong Peoples R China|Hong Kong Polytech Univ Dept Appl Phys Hong Kong Peoples R China|Xi An Jiao Tong Univ Sch Microelect Xian 710049 Peoples R China;
Univ Hong Kong Dept Elect & Elect Engn Hong Kong Peoples R China;
Univ Hong Kong Dept Elect & Elect Engn Hong Kong Peoples R China|Hong Kong Polytech Univ Dept Appl Phys Hong Kong Peoples R China;
Organic thin film transistors; Logic gates; Dielectrics; Silicon; Substrates; Threshold voltage; Pentacene; Organic thin-film transistor; carrier mobility; high-k dielectric; HfLaO; low temperature;
机译:掺Nb的Nd_2O_3栅介质高性能并五苯有机薄膜晶体管。
机译:并五苯有机薄膜晶体管中氮化铝栅极电介质上的碳附着
机译:并五苯有机薄膜晶体管中氮化铝栅介质上的甲烷暴露
机译:具有平面底接触结构和双层栅极电介质的并五苯有机薄膜晶体管的性能改进
机译:了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
机译:氧化石墨烯作为介电和电荷陷阱元素并五苯的有机薄膜晶体管在非易失性存储器中的应用
机译:有机膦酸盐自组装单分子膜用于并联型有机薄膜晶体管的栅极介电表面改性:对比研究†