机译:掺Nb的Nd_2O_3栅介质高性能并五苯有机薄膜晶体管。
Department of Electrical and Electronic Engineering The University of Hong Kong Pokfulam Road, Hong Kong Island 999077, Hong Kong;
Department of Applied Physics The Hong Kong Polytechnic University 999077 Hung Hom, Hong Kong;
School of Microelectronics Xi’an Jiao Tong University 710049 Xi’an, China;
Department of Electrical and Electronic Engineering The University of Hong Kong Pokfulam Road, Hong Kong Island 999077, Hong Kong;
机译:高性能五烯有机薄膜晶体管基于室温处理的HF0.13LA0.87O作为栅极电介质
机译:高迁移率并五苯有机薄膜晶体管与LaxNb(1-x)Oy栅极介电质在真空胶带上制备
机译:La并入过渡金属(Y,Zr和Nb)氧化物中作为并五苯有机薄膜晶体管栅介质的研究
机译:用于高性能和低功耗有机薄膜晶体管的有机/无机混合栅极电介质
机译:利用膦酸酯单层处理的栅极电介质的改进的有机薄膜晶体管。
机译:F4TCNQ掺杂的并五苯中间层对基于顶部接触并五苯的有机薄膜晶体管性能改善的影响
机译:La并入过渡金属(Y,Zr和Nb)氧化物中作为并五苯有机薄膜晶体管的栅极电介质的研究
机译:柔性纸和玻璃基板上的并五苯有机薄膜晶体管。