Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs/GaAs quantum wells based on time-resolved pump and probe differential photoluminescence

摘要

The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAs/GaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.