Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer

摘要

Photoluminescence (PL) of InAs quantum dots (QDs) embedded in the Al_(0.30)Ga_(0.70)As/In_(0.15)Ga_(0.85)As/InGaAlAs/GaAs quantum wells (QWs) have been investigated in the temperature range of 10-500 K for as grown samples and after thermal annealing at 640 ℃ or 710 ℃ for two hours. QP samples with the different InAlGaAs capping layers (GaAs or Al_(0.1)Ga_(0.75) In_(0.15)As) have been studied. The higher PL intensity and lower energy of ground state (GS) emission are detected in the structure with Al_(0.1)Ga_(0.75) In_(0.15)As layer. This QP structure in as grown state has smaller PL thermal decay in comparison with this parameter in the structure with GaAs layer. The variation of PL intensities and peak positions at annealing are more essential in the QP structure with Al_(0.1)Ga_(0.75) In_(0.15)As capping layer, apparently, due to more efficient Ga(Al)/In intermixing.