Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes

摘要

In-grown stacking faults (IGSFs) are planar defects that do not propagate under either an applied optical or electrical bias; however, their effect upon the electrical characteristics of diodes is not well understood. We present evidence for a multilayered IGSF and discuss its electrical and optical characteristics. These IGSFs, despite similar electroluminescence signatures, were observed to act as either a current barrier or as a short between the p~+ and n~+ layers, causing increases in the leakage current in p-i-n diodes. The difference in conduction behavior is attributed to the nucleation location of the IGSF within the diode drift region.