Large-scale ordering of porous Si using anodic aluminum oxide grown by directed self-assembly

摘要

Porous Si with perfect long range order (mm~2 scale) was obtained using an integrated mask of ordered anodic aluminum oxide (AAO). This represents an increase of many orders of magnitude in the ordered domain size compared with porous Si made with self-assembled AAO masks. Here, master stamps composed of silicon nitride posts (180 nm diameter, 400 nm spacing) were imprinted into Al films that were grown onto nitride-coated Si wafers. The Al films were then anodized and the resulting ordered, nanoporous pattern was transferred into the Si using reactive ion etching. The stamps could be reused a multitude of times to produce exact replicas.