Interference of charge carrier in a double-dot nanopillar transistor

摘要

In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λ_F, the authors observe full size beats in current-voltage (Ⅰ-Ⅴ) characteristics at 300 K. Analysis based on the theory of electron charging shows that this quantum effect occurs at the state of n = 1. At large bias, the excitation is found rising to a group of mixing states of n=2 and n=3. The authors propose a phonon-assisted model to explain the results and find good agreement.