Diffusion of adatom in the selective epitaxial growth of Si(100): A molecular dynamics study

摘要

Tight-binding molecular dynamics simulation is performed for a Si adatom on the surface containing the {311} facet and the Si(100) surface to reproduce and explain the behavior of the {311} facet in the selective epitaxial growth of Si(100). In the simulation the adatom is observed to diffuse from the {311} facet to the Si(100) surface along the pathway of a trough between the dimer rows on Si(100) surface. By the tight-binding total energy calculation, it is also clarified that adatoms easily diffuse to the Si(100) surface because, after the adatom surmounts the first energy barrier to diffuse to the step edge near the {311} facet, there is no additional Schwoebel barrier and the other energy barriers gradually decrease to the top of the dimer row of Si(100). The pathway of the trough between dimer rows on the Si(100) surface is found to be energetically more favorable than the direct pathway to the dimer row from the tight-binding total energy calculation. Our tight-binding molecular dynamics simulation elucidates the mechanism responsible for the behavior of the {311} facet in the selective epitaxial growth of Si(100).