Structural, electrical, and optical properties of p-type ZnO thin films with Ag dopant

摘要

p-type ZnO films have been fabricated on a (0001) Al_2O_3 substrate, using Ag_2O as a silver dopant by pulsed laser deposition. The structural property of those films is systematically characterized by observing the shift of (0002) peak to investigate the substitution of Ag~+ for Zn~+. Narrow deposition temperature for Ag-doped p-type ZnO films has been obtained in the range of 200-250℃ with the hole concentration of 4.9 X 10~(16)-6.0 X 10~(17) cm~(-3). A neutral acceptor bound exciton has been clearly observed by photoluminescence emitted at 3.317 eV in Ag-doped p-type ZnO thin films.