In situ high-resolution transmission electron microscopy study of interfacial reactions of Cu thin films on amorphous silicon

摘要

Interfacial reactions of Cu with amorphous silicon (a-Si) in the Cu/a-Si/glass system are studied by in situ high-resolution transmission electron microscopy at 550℃. Various Cu silicides, such as η-Cu_3Si, Cu_(15)Si_4 and Cu_5Si, and Cu particles are observed. The formation of the Cu particles can be attributed to a heating effect from electron beam irradiation. Around the Cu silicides, crystallization of a-Si occurs. Around the Cu particles, however, crystallization does not occur. Crystallization appears to be enhanced by Cu dissolved in a-Si.