Resistance switching in BaTiO_(3-δ)/Si p-n heterostructure

摘要

The resistance switching characteristic and electric displacement-voltage hysteresis loop have been observed in BaTiO_(3-δ)/Si p-n heterostructures fabricated by laser molecular beam epitaxy. The ferroelectric response of BaTiO_(3-δ) can be enhanced by the interface polarization of the junction. The resistance switching property observed in the BaTiO_(3-δ)/Si p-n junction can be attributed to the irreversibility of polarization in the polarization and depolarization processes. The present results indicate a potential application of resistance switching in the heterostructures consisting of oxides and Si.