Modulation of high current gain (β > 49) light-emitting InGaN/GaN heterojunction bipolar transistors

摘要

The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm~2 emitter device demonstrates a current gain β = ΔI_c/ΔI_B=49 at 3 mA and breakdown voltage, BV_(CEO) > 70 V. The radiative recombination spectrum of a large area 100 × 100 μm~2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.