Detection of low energy single ion impacts in micron scale transistors at room temperature

摘要

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, microscale transistors by electron beam assisted etching. Device currents increase due to the generation of positively charged defects in gate oxides when ions (~(121)Sb~(12+,14+) and Xe~(6+); 50-70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for the development of single atom devices and studies of dopant fluctuation effects.