Structural and electrical properties of Pb(Zr,Ti)O_3 films grown by molecular beam epitaxy

摘要

Single-crystal, single-phase Pb(Zr_xTi_(1－x))O_3 films (x=0-0.4) were grown on (001) SrTiO_3 and SrTiO_3:Nb substrates by molecular beam epitaxy. Layer-by-layer growth of the Pb(Zr,Ti)O_3 films was achieved by using PbTiO_3 buffer layers between the SrTiO_3 substrates and the Pb(Zr,Ti)O_3 films. The layers with low Zr content showed high crystallinity with full width at half maximum of ω-rocking curves as low as 4 arc min, whereas increase in Zr concentration led to pronounced angular broadening. The PbZr_(0.07)Ti_(0.93)O_3 films exhibited remanent polarization as high as 83 μC/cm~2, but local areas suffered from nonuniform leakage current.