The metal-insulator transition in VO_2 studied using terahertz apertureless near-field microscopy

摘要

We have studied the metal-insulator transition in a vanadium dioxide (VO_2) thin film using terahertz apertureless near-field optical microscopy. We observe a variation of the terahertz amplitude due to the phase transition induced by an applied voltage across the sample. The change of the terahertz signal is related to the abrupt change of the conductivity of the VO_2 film at the metal-insulator transition. The subwavelength spatial resolution of this near-field microscopy makes it possible to detect signatures of micron-scale metallic domains in inhomogeneous VO_2 thin films.