Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

摘要

The purpose of this paper is to understand metal/germanium (Ge) junction characteristics. Electrode metals with a wide work function range were deposited on Ge. All metal/p-Ge and metal-Ge junctions have shown Ohmic and Schottky characteristics, respectively, with the strong Fermi-level pinning. The charge neutrality level (CNL) at metal/Ge interface is close to the branch point calculated for the bulk Ge. Moreover, the pinning level is hardly modulated by annealing in forming gas, forming metal-germanide/Ge interfaces or changing the substrate orientation. These results suggest that Fermi level at metal/Ge interface is intrinsically pinned at the CNL characterized by the metal-induced gap states model.