A block of a sensing detection voltage generation strong-ARM latch amplification circuit comprises: a sensing detection voltage generation strong-ARM amplification unit (700); a CLK generation unit (701); a sensor unit (702); and a surge current protection unit (712). An S_OUT signal input transistor (706) is a transistor device for inputting an S_OUT signal of the sensor unit (702). An S_REF signal input sensing detection voltage generation transistor (707) is a transistor device for inputting an S_REF signal of the sensor unit (702). The S_REF signal input sensing detection voltage generation transistor (707) connects a plurality of transistors in series or in parallel in order to generate a sensing detection voltage characteristic of a predetermined value, which is different from the S_OUT signal input transistor (706), thereby having different current driving capability from the S_OUT signal input transistor (706). A PCB substrate (502) is formed in a 4-pin PCB structure consisting of four pins (P1, P2, P3, P4) for interface connection with an external circuit.
展开▼