Spectral dependence of the photoluminescence decay in disordered semiconductors

摘要

Kinetics of the energy transfer and the corresponding photoluminescence decay at selected photon energies in disordered semiconductors are studied theoretically. The authors show a straightforward way to arrive analytically at the solutions for the spectral and time dependences of the photoluminescence decay within a model based on the interplay between the radiative recombination and hopping energy relaxation of localized excitons. The theory is supported by comparison with experimental data, which yields valuable information on major properties of disorder in the underlying structures.