首页> 外文OA文献 >Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors

【2h】

Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors

机译：用于III-V半导体载体松弛的激发和温度依赖性的光致发光和寿命测量

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Kathy Kyaw Min;
展开▼
作者单位

展开▼
年度 2018
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors [J] . Kathy Kyaw Min, Phyoe Sandar Win, Hla Myo Tun, Optics . 2018,第1期

机译：III-V半导体中载流子弛豫的激发和温度依赖性的光致发光和寿命测量
2. Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors [J] . Reshchikov Michael A. Journal of Applied Physics . 2014,第1期

机译：III-V和II-VI半导体中与缺陷相关的光致发光的温度依赖性
3. Stoichiometry dependence of the optical and minority -carrier lifetime behaviors of CdTe epitaxial films: A low -temperature and time-resolved photoluminescence study [J] . Tang Kai, Zhu Xuanting, Zhu Liangqing, Applied Surface Science . 2016,第nova30期

机译：CdTe外延膜的光学和少数载流子寿命行为的化学计量比依赖性：低温和时间分辨的光致发光研究
4. REVIEW AND RECENT DEVELOPMENT IN COMBINING PHOTOLUMINESCENCE- AND ELECTROLUMINESCENCE-IMAGING WITH CARRIER LIFETIME MEASUREMENTS VIA MODULATED PHOTOLUMINESCENCE AT VARIABLE TEMPERATURES [C] . H. Hoffler, F. Schindler, A. Brand, European Photovoltaic Solar Energy Conference and Exhibition . 2021

机译：通过调制光致发光在可变温度下通过调制光致发光将光致发光和电致发光成像与电致发光和电致发光成像结合的综述和最近的开发
5. Photoluminescence properties of erbium-doped III-V semiconductors. [D] . Culp, Thomas Dudley. 1998

机译：掺III III-V半导体的光致发光特性。
6. Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements [O] . Thomas P. Weiss, Benjamin Bissig, Thomas Feurer, -1

机译：时间分辨光致发光测量中具有不同表面处理的薄膜半导体的体相和表面复合特性
7. Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors [O] . Reshchikov Michael A. 2014

机译：III-V和II-VI半导体中与缺陷相关的光致发光的温度依赖性
8. Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors [R] . Cumblidge, K. 2004

机译：利用时间分辨光致发光测量中波红外半导体中载流子弛豫的激发和温度依赖性

Photoluminescence and Lifetime Measurement for the Excitation and Temperature Dependence of Carrier Relaxation in III-V Semiconductors

著录项

引文网络

相似文献

相关主题

期刊订阅