The resistance switching mechanism of TiO_2 films under voltage sweep mode was investigated. From the observed soft set of Pt/TiO_2/Pt sample and from the polarity-dependant switching behavior of Ir(O)/TiO_2/Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors' recent observation [K. Kim et al., Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al_2O_3/TiO_2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.
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