InAsSb/GaSb heterostructure based mid-wavelength-infrared detector for high temperature operation

摘要

The properties of a midinfrared photodetector, based on a lattice matched n-N InAs_(0.91)Sb_(0.09)/GaSb type-Ⅱ heterostructure, were investigated. The relatively simple two layer structure shows very promising characteristics for sensitive and dual color infrared detection. Ⅰ-Ⅴ characteristics and spectral response were measured at the temperature range of 10-300 K. High zero-bias resistance area product R_0A of 2.5 Ω cm~2 was obtained at room temperature. The measured background limited infrared photodetection temperature was 180 K corresponding to 4.1 μm cutoff. Shot and Johnson noise limited detectivities corresponding to InAsSb absorption were measured to be 1.3 X10~(10) and 4.9 X 10~9 cm Hz~(1/2) W~(-1) at 180 and 300 K, respectively. An enhanced optical response with gain larger than unity was observed below 120 K. Bias tunable dual color detection was demonstrated at all measured temperatures.