Excimer laser irradiation induced suppression of off-state leakage current in organic transistors

摘要

The authors report the suppression of the off-state leakage current and subthreshold swing (SS) in inkjet-printed poly(3-hexylthiophene) thin-film transistors with asymmetric work function source and drain electrodes. Indium tin oxide (ITO) material was used as source/drain electrodes and the source electrode was irradiated by KrF excimer laser. The dominant mechanisms for the suppressive I_(off) could be attributed to the increase in the work function of ITO source irradiated by the excimer laser. Lower trap state density formed on the laser irradiated source electrode. Holes could be easily injected into the channel at small lateral electric field resulting in smaller threshold voltage and SS.