Low temperature epitaxial growth of GaN films on LiGaO_2 substrates

摘要

GaN films have been grown on LiGaO_2 {001} substrates at low substrate temperatures by pulsed laser deposition and their structural properties have been investigated. It is found that the metal-face LiGaO_2 substrates are thermally more stable than O-face LiGaO_2. It is also found that growth of GaN films proceeds epitaxially, even at room temperature (RT), on metal-face LiGaO_2, but poly crystalline GaN films are formed on O-face LiGaO_2 at RT. Reduction in growth temperature lessens the interface reactions that have previously been regarded as the most serious problem with this substrate have been revealed by x-ray reflectivity measurements.