Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

摘要

The room-temperature two-dimensional hole gas (2DHG) conductivity as high as 649.3 μS is obtained by implementation of double-side modulation doping (DS-MOD) of an 8 nm thick strained Ge quantum well in a SiGe heterostructure. This conductivity is about three times higher than that of the conventional SiGe heterostructure with single-side modulation doping (SS-MOD). While the low-temperature (T=3 K) mobility with DS-MOD is two times higher than that with SS-MOD, the room-temperature mobility of the two is practically the same, suggesting that phonon scattering is the dominant limiting mechanism at the device operating temperatures.