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Photoluminescence properties of Cr~(2+):ZnSe films deposited by radio frequency magnetron cosputtering

机译:射频磁控共溅射沉积Cr〜(2 +):ZnSe薄膜的光致发光特性

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摘要

Cr~(2+): ZnSe films were grown at room temperature by the radio frequency magnetron cosputtering technique. The structural characterization of the films shows that the corresponding films are well crystallized mainly in the cubic zinc-blende structure with strong < 111 > orientations. Using direct (1850 nm) and indirect (visible) excitations, photoluminescence experiments in the midinfrared spectral region reveal that Cr is incorporated in the optically active Cr~(2+) state, and the shape of the spectra agrees with that reported for bulk materials. This study shows that magnetron cosputtering can provide viable structures for the realization of optically and electrically pumped midinfrared microlasers.
机译:Cr〜(2+):ZnSe薄膜在室温下通过射频磁控共溅射技术生长。膜的结构表征表明,相应的膜主要在具有强<111>取向的立方锌-闪锌矿结构中良好地结晶。使用直接(1850 nm)和间接(可见)激发,在中红外光谱区域进行的光致发光实验表明,Cr以光学活性Cr〜(2+)态结合,并且光谱形状与散装材料的报道一致。这项研究表明,磁控共溅射可以为实现光泵浦和电泵浦中红外微激光器提供可行的结构。

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